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2SC3857
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3857 200 200 6 15 5 150(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Audio and General Purpose
(Ta=25C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=5A IC=10A, IB=1A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 100max 100max 200min
External Dimensions MT-200
36.40.3 24.40.2 2-o3.20.1 9 7 21.40.3 2.1 6.00.2
2SC3857
Unit
A A
V
a b
50min 3.0max 20typ 250typ V MHz pF
20.0min
4.0max
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL () 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.5 IB2 (A) -0.5 ton (s) 0.3typ tstg (s) 2.4typ tf (s) 0.4typ
Weight : Approx 18.4g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
5A 1.
1A
V CE ( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t)( V ) 3
IC - V BE Temperature Characteristics (Typical)
15 (V C E= 4V)
15
6
m 00
A
400m
A
Collector Current I C (A)
Collector Current I C( A)
20 0m A
10
2
10
10 0m A
p)
Tem
se
C
I C= 15A 10A 5A 0 0 1 2 Base Current I B( A) 3 4 0 0
0
0
1
2
3
4
25C
-30C
125
(Case
5
IB=50m A
1
5
(Ca
1 Base-Emittor Voltage V B E( V)
Temp
)
2
Collector-Emitter Voltage V C E( V)
(V C E= 4V) 300 DC Curr ent Gain h FE DC Curr ent Gain h FE 300
(V C E= 4V)
j-a(C/W)
hFE - IC Characteristics (Typical)
h FE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
2
Transient Thermal Resistance
125C
1
Typ
100
100
25C
0.5
50
50
-30C
20 0.02
0.1
0.5
1
5
10 15
20 0.02
0.1
0.5
1
5
10 15
0.1
1
10
100 Time t(ms)
1000
2000
Collector Current I C( A)
Collector Current I C (A)
fT - IE Characteristics (Typical)
(VCE=12V) 40 50
Safe Operating Area (Single Pulse)
160
20
P c - T a Derating
3m
m s
s
Cut-o ff Fr equ ency f T( M H Z)
30 Collector Cu rre nt I C( A)
D
10 5
C
Ma xim um Powe r Dissipat io n P C (W)
10ms
120
10 0m
W ith
Typ
s
In fin ite he
20
80
at si nk
1 0.5 Without Heatsink Natural Cooling
10
40
0 -0.02
0.1 -0.1 -1 Emitter Current I E( A) -10 2 10 100 300 Collector-Emitter Voltage V C E( V)
5 0
Without Heatsink 0 25 50 75 100 125 150
Ambient Temperature Ta(C)
79

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